Plasma-assisted metalorganic chemical vapor deposition growth of ZnO thin films

被引：0

作者：

Losurdo M. ^{[1
]}

Giangregorio M.M. ^{[1
]}

Sacchetti A. ^{[1
]}

Capezzuto P. ^{[1
]}

Bruno G. ^{[1
]}

Malandrino G. ^{[2
]}

Fragalà I.L. ^{[2
]}

机构：

[1] Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, INSTM

[2] Dipartimento di Scienze Chimiche, Università di Catania, INSTM

来源：

Journal of Materials Research | 2006年 / 21卷 / 7期

关键词：

D O I：

10.1557/jmr.2006.0221

中图分类号：

学科分类号：

摘要：

ZnO thin films have been grown by metalorganic chemical vapor deposition (MOCVD) and plasma-assisted (PA) MOCVD on c-axis-oriented sapphire (0001) and Si (001) substrates using the novel Zn(2-thenoyltrifluoroacetonate)2 · N,N,N',N'-tetramethylethylendiamine precursor. The structural, morphological, and optical properties of ZnO films have been investigated. The results show that the O2 PA growth results in highly c-axis-oriented hexagonal ZnO thin films also on cubic substrates. PA-MOCVD ZnO films have good optical properties, as inferred by the presence of a sharp and intense exciton in the dielectric function. © 2006 Materials Research Society.

引用

页码：1632 / 1637

页数：5

共 50 条

[1] Plasma-assisted metalorganic chemical vapor deposition growth of ZnO thin films
Losurdo, Maria
Giangregorio, Maria M.
Sacchetti, A.
Capezzuto, Pio
Bruno, Giovanni
Malandrino, Graziella
Fragala, Ignazio L.
[J]. JOURNAL OF MATERIALS RESEARCH, 2006, 21 (07) : 1632 - 1637
[2] PLASMA-ASSISTED METALORGANIC CHEMICAL VAPOR-DEPOSITION OF ZNSE FILMS
MINO, N
KOBAYASHI, M
KONAGAI, M
TAKAHASHI, K
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) : 2216 - 2221
[3] Preparation of SnO2 thin films by plasma-assisted metalorganic chemical vapor deposition
Shirakata, S
Yokoyama, A
Isomura, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (6A): : L722 - L724
[4] Epitaxial growth of InN by plasma-assisted metalorganic chemical vapor deposition
Sato, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (5B): : L595 - L597
[5] The growth of single cubic phase ZnS thin films on silica glass by plasma-assisted metalorganic chemical vapor deposition
Zhang, Z. Z.
Shen, D. Z.
Zhang, J. Y.
Shan, C. X.
Lu, Y. M.
Liu, Y. C.
Li, B. H.
Zhao, D. X.
Yao, B.
Fan, X. W.
[J]. THIN SOLID FILMS, 2006, 513 (1-2) : 114 - 117
[6] Metalorganic chemical vapor deposition of semiconducting ZnO thin films and nanostructures
Kim, Sang-Woo
[J]. JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY, 2006, 16 (01): : 12 - 19
[7] Nitrogen radical densities during GaN growth by molecular beam epitaxy, plasma-assisted metalorganic chemical vapor deposition, and conventional metalorganic chemical vapor deposition
Sato, M
[J]. SOLID-STATE ELECTRONICS, 1997, 41 (02) : 223 - 226
[8] Plasma-assisted MOCVD growth of ZnO thin films
Losurdo, Maria
Giangregorio, Maria M.
Capezzuto, Pio
Bruno, Giovanni
Malandrino, Graziella
Blandino, Manuela
Fragala, Ignazio L.
[J]. GAN, AIN, INN AND RELATED MATERIALS, 2006, 892 : 445 - +
[9] Plasma-assisted MOCVD growth of ZnO thin films
Losurdo, Maria
Giangregorio, Maria M.
Capezzuto, Pio
Bruno, Giovanni
Malandrino, Graziella
Blandino, Manuela
Fragala, Ignazio L.
[J]. PROGRESS IN SEMICONDUCTOR MATERIALS V-NOVEL MATERIALS AND ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, 2006, 891 : 387 - +
[10] Plasma-assisted chemical vapor deposition of dielectric thin films for ULSI semiconductor circuits
Cote, DR
Nguyen, SV
Stamper, AK
Armbrust, DS
Többen, D
Conti, RA
Lee, GY
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1999, 43 (1-2) : 5 - 38

← 1 2 3 4 5 →