One-dimensional porous-silicon photonic band-gap structures with tunable reflection and dispersion

被引:0
|
作者
Golovan, LA [1 ]
Kashkarov, PK [1 ]
Syrchin, MS [1 ]
Zheltikov, AM [1 ]
机构
[1] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119899, Russia
关键词
D O I
10.1002/1521-396X(200011)182:1<437::AID-PSSA437>3.0.CO;2-K
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The method of fabrication of porous-silicon multilayer structures with periodically modulated porosity was used to obtain one-dimensional photonic band-gap structures with tunable reflection and dispersion. We present the results of transfer-matrix calculations of reflection and dispersion properties of such photonic band-gap structures illustrating the idea of fabricating one-dimensional porous-silicon photonic band-gap broadband reflectors and elements to control parameters of short light pulses. Reflection spectra of the fabricated porous-silicon multilayers indicate that the reflection and dispersion properties of 1D porous-silicon PEG structures can be precisely controlled by varying the parameters of the technological process.
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页码:437 / 442
页数:6
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