Field emission from GeSe2 nanowalls

Single-crystalline GeSe2 nanowalls were prepared via a chemical vapor deposition process. Field-emission (FE) properties of as-prepared GeSe2 nanowalls were investigated. The FE properties could be observed in the GeSe2 nanowalls. The electron emission process from GeSe2 nanowalls is a quantum tunneling process, which follows the Fowler-Nordheim behavior. Their turn-on fields and current densities are comparable to those of many other semiconductor nanomaterials. The field enhancement factor for a single GeSe2 nanowall is estimated to be as high as 527 and 1054 with the average spacing between the electrodes is 100 mu m and 200 mu m, respectively. These results indicate that GeSe2 nanostructures are promising candidates for applications in field emitter. (C) 2011 American Institute of Physics. [doi:10.1063/1.3569147]