Tritone inspection for embedded phase shift mask

被引：0
|
作者：
Cheng, WH [1 ]
Farnsworth, J [1 ]
Tejnil, E [1 ]
机构：
[1] Intel Co, Intel Mask Operat, Santa Clara, CA 95052 USA
来源：
20TH ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY | 2000年 / 4186卷
关键词：
embedded phase shift mask; inspection; tritone; ternary;
D O I：
暂无
中图分类号：
TP31 [计算机软件];
学科分类号：
081202 ; 0835 ;
摘要：
Embedded phase shift masks (ePSM) are critical to patterning the contact layer of integrated circuit devices of 130 nm technology node and beyond. Required ePSM inspection methodologies needed for the successful manufacturing of a "defect-free" ePSM are discussed in this study. We present an analysis of different inspection schemes for handling inspection system optical signals from tritone ePSM. Programmed defect ePSM plates with 6% shifter material transmission fabricated for 248 nm and 193 nm wafer exposures are characterized by metrology tools and inspected on existing optical mask inspection systems, Capture rates for various defect types are analyzed. The results of inspection sensitivity analysis are also compared with the defect specifications based on a defect printability simulation study, Key challenges ternary ePSM inspection are also discussed.
引用
收藏
页码：818 / 826
页数：9
相关论文
共 50 条
  • [41] Phase-enhanced defect sensitivity for EUV mask inspection
    Wang, Yow-Gwo
    Miyakawa, Ryan
    Chao, Weilun
    Goldberg, Kenneth
    Neureuther, Andy
    Naulleau, Patrick
    PHOTOMASK TECHNOLOGY 2014, 2014, 9235
  • [42] Mask defect inspection study with high speed mask inspection system
    Jun, J
    Kim, H
    Choi, S
    Choi, Y
    Han, O
    24TH ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PT 1 AND 2, 2004, 5567 : 64 - 71
  • [43] Evaluation of EUV mask defect using blank inspection, patterned mask inspection, and wafer inspection
    Kamo, Takashi
    Terasawa, Tsuneo
    Yamane, Takeshi
    Shigemura, Hiroyuki
    Takagi, Noriaki
    Amano, Tsuyoshi
    Tawarayama, Kazuo
    Nozoe, Mari
    Tanaka, Toshihiko
    Suga, Osamu
    Mori, Ichiro
    EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY II, 2011, 7969
  • [44] Automatic alternative phase shift mask CAD layout tool for gate shrinkage of embedded DRAM in logic below 0.18μm
    Ohnuma, H
    Kawahira, H
    PHOTOMASK AND X-RAY MASK TECHNOLOGY V, 1998, 3412 : 206 - 213
  • [45] Evaluation of phase and transmittance error on deep UV halftone phase shift mask
    Kyoh, S
    Sakurai, H
    Iwamatsu, T
    Yamada, A
    Higashikawa, I
    PHOTOMASK AND X-RAY MASK TECHNOLOGY III, 1996, 2793 : 127 - 133
  • [46] THE EFFECT OF DUTY RATIO IN-PHASE SHIFT MASK DESIGN
    MATHUR, BP
    ARSHAK, KI
    MICROELECTRONIC ENGINEERING, 1994, 23 (1-4) : 143 - 146
  • [47] Depth-of-focus and the alternating phase-shift mask
    Mack, CA
    MICROLITHOGRAPHY WORLD, 2004, 13 (04): : 20 - 21
  • [48] Evaluation of performance of attenuated phase shift mask using simulation
    Fukushima, Y
    Fukuhara, N
    Ueyama, K
    PHOTOMASK AND X-RAY MASK TECHNOLOGY III, 1996, 2793 : 138 - 145
  • [49] Optimization of FIB methods for phase shift mask defect repair
    Cui, Z
    Prewett, PD
    Watson, JG
    MICROELECTRONIC ENGINEERING, 1996, 30 (1-4) : 575 - 578
  • [50] AUTOMATIC-GENERATION OF PHASE-SHIFT MASK LAYOUTS
    WAAS, T
    EISENMANN, H
    HARTMANN, H
    HENKE, W
    MICROELECTRONIC ENGINEERING, 1994, 23 (1-4) : 139 - 142
12345