Impact of metal dummy fills on the performance of CMOS inductors

被引：0

作者：

Nan, Lan ^{[1
]}

Mouthaan, Koen ^{[1
]}

Xiong, Yong-Zhong ^{[2
]}

Shi, Jinglin ^{[2
]}

Rustagi, Subhash Chander ^{[2
]}

Ooi, Ban-Leong ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect Engn, Singapore 117576, Singapore

[2] Inst Microelect, Singapore, Singapore

来源：

EDSSC: 2007 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, VOLS 1 AND 2, PROCEEDINGS | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To meet the metal density and uniformity requirement, metal dummy fills are inserted on all metallization layers in modern CMOS technologies. These metal dummy rills can have a detrimental effect on the performance of IC components. In this paper, the impact of metal dummy fills on the equivalent circuit and the performance of on-chip spiral inductors is presented based on experimental data. A simple closed-form formula is further provided to account for the effect of metal dummy rills to update the model for inductors in the conventional environment without metal dummy fills.

引用

页码：251 / +

页数：2

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