Calculation of the vertical and horizontal electron mobilities in InAs/GaSb superlattices

被引：10
|
作者：
Szmulowicz, F. [1 ]
Brown, G. J. [2 ]
机构：
[1] Univ Dayton, Res Inst, Dayton, OH 45469 USA
[2] USAF, Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA
来源：
APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 18期
关键词：
INTERFACE ROUGHNESS SCATTERING; SEMICONDUCTOR SUPERLATTICES; LOW-TEMPERATURE; TRANSPORT;
D O I：
10.1063/1.3584865
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Efficient perpendicular transport of carriers by drift and diffusion in InAs/GaSb superlattice-based devices is necessary for achieving high device figures of merit. However, the values of perpendicular mobilities are usually inferred indirectly or through nonstandard experiments. Treating perpendicular and transverse mobilities on equal footing, we present here the results of a calculation of low-temperature perpendicular and transverse electron mobilities in InAs/GaSb superlattices as limited by interface-roughness scattering. Using the calculated mobility curves, it is possible to infer the value of the vertical mobility from measurements of the horizontal mobility. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3584865]
引用
收藏
页数：3
相关论文
共 50 条
  • [1] Calculation of vertical and horizontal mobilities in InAs/GaSb superlattices
    Szmulowicz, F.
    Haugan, H. J.
    Elhamri, S.
    Brown, G. J.
    [J]. PHYSICAL REVIEW B, 2011, 84 (15)
  • [2] Calculation of the temperature dependence of the vertical and horizontal mobilities in InAs/GaSb superlattices
    Szmulowicz, F.
    Haugan, H. J.
    Elhamri, S.
    Brown, G. J.
    [J]. INFRARED PHYSICS & TECHNOLOGY, 2013, 56 : 76 - 79
  • [3] Reprint of "Calculation of the temperature dependence of the vertical and horizontal mobilities in InAs/GaSb superlattices"
    Szmulowicz, F.
    Haugan, H. J.
    Elhamri, S.
    Brown, G. J.
    [J]. INFRARED PHYSICS & TECHNOLOGY, 2013, 59 : 60 - 63
  • [4] Calculation of interface roughness scattering-limited vertical and horizontal mobilities in InAs/GaSb superlattices as a function of temperature
    Szmulowicz, F.
    Brown, G. J.
    [J]. JOURNAL OF APPLIED PHYSICS, 2013, 113 (01)
  • [5] Demonstration of interface-scattering-limited electron mobilities in InAs/GaSb superlattices
    Szmulowicz, F.
    Elhamri, S.
    Haugan, H. J.
    Brown, G. J.
    Mitchel, W. C.
    [J]. JOURNAL OF APPLIED PHYSICS, 2007, 101 (04)
  • [6] Magnetoresistance of vertical transport in InAs/GaSb superlattices
    Broadley, VJ
    Nicholas, RJ
    Mason, NJ
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4): : 736 - 740
  • [7] Method for the simultaneous determination of vertical and horizontal mobilities in superlattices
    Swartz, C. H.
    Myers, T. H.
    [J]. PHYSICAL REVIEW B, 2014, 89 (07):
  • [8] Vertical transport in InAs/GaSb type-II superlattices
    Umana-Membreno, G. A.
    Klein, B.
    Kala, H.
    Antoszewski, J.
    Gautam, G.
    Kutty, M. N.
    Plis, E.
    Krishna, S.
    Faraone, L.
    [J]. 2012 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAD 2012), 2012, : 5 - +
  • [9] THE STRUCTURE OF INAS/GASB SUPERLATTICES
    DECOOMAN, BC
    CARTER, CB
    WICKS, GW
    TANOUE, T
    EASTMAN, LF
    [J]. THIN SOLID FILMS, 1989, 170 (01) : 49 - 62
  • [10] Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices
    Umana-Membreno, G. A.
    Klein, B.
    Kala, H.
    Antoszewski, J.
    Gautam, N.
    Kutty, M. N.
    Plis, E.
    Krishna, S.
    Faraone, L.
    [J]. APPLIED PHYSICS LETTERS, 2012, 101 (25)
12345