Determining the Emission of a Device from the Near Field of an IC

被引：0
|
作者：
Langer, Gunter [1 ]
Hacker, Joerg [1 ]
机构：
[1] Langer EMV Tech GmbH, Bannewitz, Germany
来源：
2019 12TH INTERNATIONAL WORKSHOP ON THE ELECTROMAGNETIC COMPATIBILITY OF INTEGRATED CIRCUITS (EMC COMPO 2019) | 2019年
关键词：
emission; radiation; near field; equivalent current; magnetic field probe; simulation;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
EMC parameters of complex ICs are unknown. Therefore the simulation of the emission of electronic devices is challenging. The article introduces a method to describe ICs by an equivalent current. It is explained how this current can be determined metrological and used for a calculation of the far field. Any IC can be characterized by an equivalent current. Hence, the equivalent current can be used as a global IC EMC parameter.
引用
收藏
页码：67 / 69
页数：3
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