Low-Power Embedded ReRAM Technology for IoT Applications

被引：0

作者：

Ueki, M. ^{[1
]}

Takeuchi, K. ^{[1
]}

Yamamoto, T. ^{[1
]}

Tanabe, A. ^{[1
]}

Ikarashi, N. ^{[1
]}

Saitoh, M. ^{[1
]}

Nagumo, T. ^{[1
]}

Sunamura, H. ^{[1
]}

Narihiro, M. ^{[1
]}

Uejima, K. ^{[1
]}

Masuzaki, K. ^{[1
]}

Furutake, N. ^{[1
]}

Saito, S. ^{[1
]}

Yabe, Y. ^{[1
]}

Mitsuiki, A. ^{[2
]}

Takeda, K. ^{[3
]}

Hase, T. ^{[1
]}

Hayashi, Y. ^{[1
]}

机构：

[1] Renesas Elect Corp, Mass Market & Emerging Country Business Div, Chuou Ku, 1120 Shimokuzawa, Sagamihara, Kanagawa 2525298, Japan

[2] Renesas Elect Corp, Device Technol Div, Chuou Ku, Sagamihara, Kanagawa 2525298, Japan

[3] Renesas Elect Corp, Incubat Ctr, Chuou Ku, Sagamihara, Kanagawa 2525298, Japan

来源：

2015 SYMPOSIUM ON VLSI TECHNOLOGY (VLSI TECHNOLOGY) | 2015年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A low-power 2Mb ReRAM macro was developed in 90 nm CMOS platform, demonstrating lower power data-writing (x1/7) and faster data-reading (x2 similar to 3) as compared to a conventional flash. The memory window at -6 sigma for 10 years was confirmed with a high-speed 1-bit ECC considering operating temperature ranging from -40 to 85 degrees C, where the worst conditions are high-temperature (85 degrees C) "Off" writing and low-temperature (-40 degrees C) "On" writing followed by high-temperature (85 degrees C) retention. A pulse-modulated Off-state verify and an interface-control of Ru electrode are effective for suppressing random fluctuation of R-off readout and for sustaining the On-state retention, respectively.

引用

页数：2

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