Photoluminescence and transport properties of multilayer InAs/GaAs structures with quantum dots

被引：9
|
作者：
Kul'bachinskii, VA [1 ]
Kytin, VG [1 ]
Lunin, RA [1 ]
Golikov, AV [1 ]
Malkina, IG [1 ]
Zvonkov, BN [1 ]
Saf'yanov, YN [1 ]
机构：
[1] Moscow MV Lomonosov State Univ, Moscow 119899, Russia
来源：
SEMICONDUCTORS | 1999年 / 33卷 / 03期
关键词：
D O I：
10.1134/1.1187687
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The transport and optical properties of InAs/GaAs structures with quantum dots on a vicinal surface have been investigated as a function of InAs content. It was found that the quantum dots form two-dimensional hole or electron layers, from which the Shubnikov-de Haas effect was observed. The temperature dependence of the resistance was measured in the [110] and [(1) over bar 10] directions in the temperature range 4.2-300 K, and the anisotropy of the conductivity was found. Strong localization occurs when electrons are trapped in InAs dots. The spectra of inplane photoluminescence showed strong polarization of the quantum-dot radiation. (C) 1999 American Institute of Physics. [S1063-7826(99)01303-4].
引用
收藏
页码：318 / 322
页数：5
相关论文
共 50 条
  • [1] Low temperature transport properties of InAs/GaAs structures with quantum dots
    Kulbachinskii, VA
    Kytin, VG
    Lunin, RA
    Malkina, IG
    Zvonkov, BN
    Safyanov, YN
    [J]. MICROELECTRONIC ENGINEERING, 1998, 43-4 : 107 - 111
  • [2] Polarization anisotropy of photoluminescence from multilayer InAs/GaAs quantum dots
    Humlícek, J
    Munzar, D
    Navrátil, K
    Lorenc, M
    Oswald, J
    Pangrác, J
    Hulicius, E
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4): : 229 - 232
  • [3] Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots
    Sanguinetti, S
    Padovani, M
    Gurioli, M
    Grilli, E
    Guzzi, M
    Vinattieri, A
    Colocci, M
    Frigeri, P
    Franchi, S
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (09) : 1307 - 1309
  • [4] Photoluminescence from multilayer InAs/GaAs structures with quantum dots in the 1.3–1.4 μm wavelength range
    V. A. Egorov
    V. N. Petrov
    N. K. Polyakov
    G. É. Tsyrlin
    B. V. Volovik
    A. E. Zhukov
    V. M. Ustinov
    [J]. Technical Physics Letters, 2000, 26 : 631 - 633
  • [5] Photoluminescence from multilayer InAs/GaAs structures with quantum dots in the 1.3-1.4 μm wavelength range
    Egorov, VA
    Petrov, VN
    Polyakov, NK
    Tsyrlin, GÉ
    Volovik, BV
    Zhukov, AE
    Ustinov, VM
    [J]. TECHNICAL PHYSICS LETTERS, 2000, 26 (07) : 631 - 633
  • [6] Comparison of luminescence properties of bilayer and multilayer InAs/GaAs quantum dots
    Shah, S. Y.
    Halder, N.
    Sengupta, S.
    Chakrabarti, S.
    [J]. MATERIALS RESEARCH BULLETIN, 2012, 47 (01) : 130 - 134
  • [7] Optical properties and electronic structures in InAs/GaAs quantum dots
    Jung, JH
    Im, HC
    Kim, JH
    Kim, TW
    Kwack, KD
    Yoo, KH
    Kim, MD
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 45 : S622 - S625
  • [8] Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures
    Wang, J. S.
    Yu, S. H.
    Lin, Y. R.
    Lin, H. H.
    Yang, C. S.
    Chen, T. T.
    Chen, Y. F.
    Shu, G. W.
    Shen, J. L.
    Hsiao, R. S.
    Chen, J. F.
    Chi, J. Y.
    [J]. NANOTECHNOLOGY, 2007, 18 (01)
  • [9] Photoluminescence of InAs quantum dots grown on GaAs surface
    Wang, JZ
    Yang, Z
    Yang, CL
    Wang, ZG
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (18) : 2837 - 2839
  • [10] Ultrafast photoluminescence spectroscopy of InAs/GaAs quantum dots
    Neudert, K.
    Trojanek, F.
    Kuldova, K.
    Oswald, J.
    Hospodkova, A.
    Maly, P.
    [J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 4, 2009, 6 (04): : 853 - +
12345