Two-Dimensional Transport--Induced Linear Magneto-Resistance in Topological Insulator Bi2Se3 Nanoribbons

被引：250

作者：

Tang, Hao ^{[1
]}

Liang, Dong ^{[1
]}

Qiu, Richard L. J. ^{[1
]}

Gao, Xuan P. A. ^{[1
]}

机构：

[1] Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA

来源：

ACS NANO | 2011年 / 5卷 / 09期

基金：

美国国家科学基金会;

关键词：

topological insulator; Bi2Se3; nanoribbon; linear magneto-resistance; two-dimensional transport; SINGLE DIRAC CONE; SURFACE-STATE; GRAPHENE; BI2TE3; PHASE;

D O I：

10.1021/nn2024607

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report the study of a novel linear magneto-resistance (MR) under perpendicular magnetic fields in Bi2Se3 nanoribbons. Through angular dependence magneto-transport experiments, we show that this linear MR is purely due to two-dimensional (2D) transport, in agreement with the recently discovered linear MR from 20 topological surface state in bulk Bi2Te3, and the linear MR of other gapless semiconductors and graphene. We further show that the linear MR of Bi2Se3 nanoribbons persists to room temperature, underscoring the potential of exploiting topological insulator nanomaterials for room-temperature magneto-electronic application's.

引用

页码：7510 / 7516

页数：7

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