High optical polarization ratio from semipolar (20(2)over-bar(1)over-bar) blue-green InGaN/GaN light-emitting diodes

被引：72
|
作者：
Zhao, Yuji [1 ]
Tanaka, Shinichi [2 ]
Yan, Qimin [2 ]
Huang, Chia-Yen [2 ]
Chung, Roy B. [2 ]
Pan, Chih-Chien [2 ]
Fujito, Kenji [3 ]
Feezell, Daniel [2 ]
Van de Walle, Chris G. [2 ]
Speck, James S. [2 ]
DenBaars, Steven P. [1 ,2 ]
Nakamura, Shuji [1 ,2 ]
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[3] Mitsubishi Chem Corp, Optoelect Lab, Ushiku, Ibaraki 3001295, Japan
来源：
APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 05期
关键词：
D O I：
10.1063/1.3619826
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The optical polarization ratio of spontaneous emission was investigated by electroluminescence measurements for semipolar (20 (2) over bar(1) over bar) InGaN/GaN light-emitting diodes, covering the blue to green spectral range. Devices fabricated on semipolar (20 (2) over bar(1) over bar) substrates exhibit polarization ratios ranging from 0.46 at 418 nm to 0.67 at 519 nm. These polarization ratios are significantly higher than those reported on semipolar (20 (2) over bar1) devices. The valence band energy separation is extracted from spectral measurements and is consistent with the increased polarization ratio and theoretical predictions. Quantum well interdiffusion induced valence band mixing is suggested as a possible explanation for the low experimental value of polarization ratio observed for the (20 (2) over bar1) devices. (C) 2011 American Institute of Physics. [doi:10.1063/1.3619826]
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页数：3
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