First-step nucleation growth dependence of InAs/InGaAs/InP quantum dot formation in two-step growth

被引：4

作者：

Yin, Zongyou ^{[1
]}

Tang, Xiaohong ^{[1
]}

Zhang, Jixuan ^{[2
]}

Deny, Sentosa ^{[1
]}

Teng, Jinghua ^{[3
]}

Du, Anyan ^{[4
]}

Chin, Mee Koy ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117574, Singapore

[3] Inst Mat Engn & Res, Singapore 117602, Singapore

[4] Inst Microelect, Singapore 117685, Singapore

来源：

NANOTECHNOLOGY | 2008年 / 19卷 / 08期

关键词：

D O I：

10.1088/0957-4484/19/8/085603

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

First-step nucleation growth has an important impact on the two-step growth of high-quality mid-infrared emissive InAs/InGaAs/InP quantum dots (QDs). It has been found that an optimized growth rate for first-step nucleation is critical for forming QDs with narrow size distribution, high dot density and high crystal quality. High growth temperature has an advantage in removing defects in the QDs formed, but the dot density will be reduced. Contrasting behavior in forming InAs QDs using metal-organic vapor phase epitaxy (MOVPE) by varying the input flux ratio of group-V versus group-III source (V/III ratio) in the first-step nucleation growth has been observed and investigated. High-density, 2.5 x 10(10) cm(-2), InAs QDs emitting at > 2.15 mu m have been formed with narrow size distribution, similar to 1 nm standard deviation, by reducing the V/III ratio to zero in first-step nucleation growth.

引用

页数：6

共 50 条

[31] Two-step growth of goethite from ferrihydrite
Burleson, DJ
Penn, RL
LANGMUIR, 2006, 22 (01) : 402 - 409
[32] Two-step photocurrent generation enhanced by miniband formation in InAs/GaAs quantum dot superlattice intermediate-band solar cells
Watanabe, Sho
Asahi, Shigeo
Kada, Tomoyuki
Hirao, Kazuki
Kaizu, Toshiyuki
Harada, Yukihiro
Kita, Takashi
APPLIED PHYSICS LETTERS, 2017, 110 (19)
[33] The kinetics of homogeneous and two-step nucleation during protein crystal growth from solution
Barlow, D. A.
Gregus, Jan
INTERNATIONAL JOURNAL OF CHEMICAL KINETICS, 2019, 51 (11) : 840 - 847
[34] Modified Finke-Watzky mechanisms for the two-step nucleation and growth of silver nanoparticles
Amirjani, Amirmostafa
Haghshenas, Davoud Fatmehsari
NANOTECHNOLOGY, 2018, 29 (50)
[35] High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth
She-Song, Huang
Zhi-Chuan, Niu
Feng, Zhan
Hai-Qiao, Ni
Huan, Zhao
Dong-Hai, Wu
Zheng, Sun
CHINESE PHYSICS B, 2008, 17 (01) : 323 - 327
[36] High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth
黄社松
牛智川
詹锋
倪海桥
赵欢
吴东海
孙征
Chinese Physics B, 2008, 17 (01) : 323 - 327
[37] Spectrally resolved intraband transitions on two-step photon absorption in InGaAs/GaAs quantum dot solar cell
Tamaki, Ryo
Shoji, Yasushi
Okada, Yoshitaka
Miyano, Kenjiro
APPLIED PHYSICS LETTERS, 2014, 105 (07)
[38] Two-step growth of graphene with separate controlling nucleation and edge growth directly on SiO2 substrates
Liu, Donghua
Yang, Wei
Zhang, Lianchang
Zhang, Jing
Meng, Jianling
Yang, Rong
Zhang, Guangyu
Shi, Dongxia
CARBON, 2014, 72 : 387 - 392
[39] The effects of nucleation in the two step growth of HVPE GaN
Tavernier, PR
Etzkorn, EV
Wang, Y
Clarke, DR
NUCLEATION AND GROWTH PROCESSES IN MATERIALS, 2000, 580 : 357 - 362
[40] Two-step growth of GaN quantum dots with metalorganic chemical vapor deposition
Chen, P
Shen, B
Zhang, R
Wang, M
Zhou, YG
Chen, ZZ
Zhang, L
Zheng, YD
WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE, 1998, 512 : 65 - 68

← 1 2 3 4 5 →