First-step nucleation growth dependence of InAs/InGaAs/InP quantum dot formation in two-step growth

被引：4
|
作者：
Yin, Zongyou [1 ]
Tang, Xiaohong [1 ]
Zhang, Jixuan [2 ]
Deny, Sentosa [1 ]
Teng, Jinghua [3 ]
Du, Anyan [4 ]
Chin, Mee Koy [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[2] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117574, Singapore
[3] Inst Mat Engn & Res, Singapore 117602, Singapore
[4] Inst Microelect, Singapore 117685, Singapore
来源：
NANOTECHNOLOGY | 2008年 / 19卷 / 08期
关键词：
D O I：
10.1088/0957-4484/19/8/085603
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
First-step nucleation growth has an important impact on the two-step growth of high-quality mid-infrared emissive InAs/InGaAs/InP quantum dots (QDs). It has been found that an optimized growth rate for first-step nucleation is critical for forming QDs with narrow size distribution, high dot density and high crystal quality. High growth temperature has an advantage in removing defects in the QDs formed, but the dot density will be reduced. Contrasting behavior in forming InAs QDs using metal-organic vapor phase epitaxy (MOVPE) by varying the input flux ratio of group-V versus group-III source (V/III ratio) in the first-step nucleation growth has been observed and investigated. High-density, 2.5 x 10(10) cm(-2), InAs QDs emitting at > 2.15 mu m have been formed with narrow size distribution, similar to 1 nm standard deviation, by reducing the V/III ratio to zero in first-step nucleation growth.
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页数：6
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