Performance of a CMOS compatible lateral bipolar photodetector on SOI substrate

被引：29

作者：

Zhang, WQ ^{[1
]}

Chan, MS ^{[1
]}

Fung, SKH ^{[1
]}

Ko, PK ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 1998年 / 19卷 / 11期

关键词：

D O I：

10.1109/55.728904

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of a photodetector fabricated using a standard CMOS process on SOI substrate has been studied. The photodetector is basically a floating gate SOI NMOSFET operating in the lateral bipolar mode, The depletion region induced by the floating gate separates the optically generated electron-hole pairs in the direction perpendicular to the current, This results in an extra current amplification beyond that of a normal lateral bipolar transistor, A high responsivity of 289 A/W has been measured with an operating voltage as low as 0.1 V, The impacts of technology scaling on the performance of the photodetector are also studied.

引用

页码：435 / 437

页数：3

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