A High-frequency Scalable Model for Thin-film Resistor on GaN Substrate

被引：0
|
作者：
Li, Yue [1 ]
Wei, Zhennan [1 ]
机构：
[1] Southeast Univ, Sch Informat Sci & Engn, Nanjing 211100, Jiangsu, Peoples R China
来源：
2015 IEEE 16TH INTERNATIONAL CONFERENCE ON COMMUNICATION TECHNOLOGY (ICCT) | 2015年
关键词：
Thin-film resistor; Equivalent circuit model; Scalability;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new approach to parameter extraction for equivalent circuit model of resistors for RF applications is proposed in this paper. The parameters of the model can be extracted with high precision and more efficiently than the current method of parameter sweep by EDA tools, especially over a wide frequency range. The model based on this approach is in close agreement with the testing results of the resistor over a frequency range of 0.1-40 GHz.
引用
收藏
页码：589 / 592
页数：4
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