Apparatus for real-time measurement of stress in thin films at elevated temperatures

被引：3
|
作者：
An, B [1 ]
Zhang, TJ [1 ]
Yuan, C [1 ]
Cui, K [1 ]
机构：
[1] Huazhong Univ Sci & Technol, State Key Lab Plast Forming Simulat & Die & Mould, Wuhan 430074, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2003年 / 20卷 / 08期
关键词：
D O I：
10.1088/0256-307X/20/8/360
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
As a prerequisite of biaxial zero creep experiments, a novel sensitive apparatus is developed for real-time film-stress measurement during thermal cycles. The optical sensor with a fixed multi-beam emitter and a CCD detector is investigated during an annealing process of Ag/Co multilayer thin film. The monitoring plots of stress as functions of temperature and time demonstrate the capability of this set-up. The typical sensitivity for measuring the wafer curvature radius is 2 km.
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页码：1387 / 1389
页数：3
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