Arbitrary waveform power controller for thermal measurements of semiconductor devices

被引:5
|
作者
Davidson, J. N. [1 ]
Stone, D. A. [1 ]
Foster, M. P. [1 ]
机构
[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1049/el.2011.3927
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Presented is a simple and easy-to-implement design for an arbitrary waveform power controller. The power dissipation in an active semiconductor device is controlled by virtue of its current and voltage for any waveform. By measuring the heating effect on an electronic product, an engineer can evaluate the effectiveness of its design. The controller is demonstrated practically with a MOSFET using an arbitrary waveform, and power dissipated in the device agrees well with intended dissipation.
引用
收藏
页码:400 / U141
页数:2
相关论文
共 50 条
  • [21] Thermal aspects of burn-in of high power semiconductor devices
    Hamilton, HE
    [J]. ITHERM 2002: EIGHTH INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS, PROCEEDINGS, 2002, : 626 - 634
  • [22] COMPUTER-AIDED THERMAL ANALYSIS OF POWER SEMICONDUCTOR DEVICES
    WENTHEN, FT
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (09) : 765 - &
  • [23] Thermal model of power semiconductor devices for electro-thermal circuit Simulations
    Igic, PM
    Mawby, PA
    Towers, MS
    Batcup, S
    [J]. 2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, 2002, : 171 - 174
  • [24] SEMICONDUCTOR POWER DEVICES
    TUCHKEVI.VM
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (11): : 1336 - &
  • [25] Low-cost High-voltage Arbitrary Waveform Generator for Broad Lifetime Measurements of Electroluminescent Devices
    Hirmer, Katrin
    Schuster, Peter
    Keil, Ferdinand
    Hofmann, Klaus
    [J]. 2016 IEEE 2ND ANNUAL SOUTHERN POWER ELECTRONICS CONFERENCE (SPEC), 2016,
  • [26] Analytical Prediction of the Thermal Behavior of Semiconductor Power Devices from Room-Temperature I-V Measurements
    Ress, Sandor
    Farkas, Gabor
    Rencz, Marta
    [J]. ENERGIES, 2024, 17 (12)
  • [27] Frequency-Domain Thermal Modeling and Characterization of Power Semiconductor Devices
    Ma, Ke
    He, Ning
    Liserre, Marco
    Blaabjerg, Frede
    [J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2016, 31 (10) : 7183 - 7193
  • [28] A note on the thermal modelling of power semiconductor devices using the network analogue
    Wong, CC
    [J]. INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2002, 15 (03) : 283 - 286
  • [29] Investigation of Thermal States of High-power Semiconductor Devices.
    Staszak, Zbigniew
    Gulczynski, Janusz
    [J]. Elektronika Warszawa, 1980, 21 (11): : 25 - 27
  • [30] Transient electro-thermal modeling of bipolar power semiconductor devices
    [J]. 1600, Morgan and Claypool Publishers (06):