Arbitrary waveform power controller for thermal measurements of semiconductor devices

被引：5

作者：

Davidson, J. N. ^{[1
]}

Stone, D. A. ^{[1
]}

Foster, M. P. ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

ELECTRONICS LETTERS | 2012年 / 48卷 / 07期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1049/el.2011.3927

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Presented is a simple and easy-to-implement design for an arbitrary waveform power controller. The power dissipation in an active semiconductor device is controlled by virtue of its current and voltage for any waveform. By measuring the heating effect on an electronic product, an engineer can evaluate the effectiveness of its design. The controller is demonstrated practically with a MOSFET using an arbitrary waveform, and power dissipated in the device agrees well with intended dissipation.

引用

页码：400 / U141

页数：2

共 50 条

[1] Arbitrary waveform power controller for thermal measurements of semiconductor devices (vol 48, pg 400, 2012)
Davidson, J. N.
Stone, D. A.
Foster, M. P.
[J]. ELECTRONICS LETTERS, 2012, 48 (11) : 666 - 666
[2] A Dynamic Thermal Controller for Power Semiconductor Devices
Sathik, Mohamed Halick Mohamed
Prasanth, Sundararajan
Sasongko, Firman
Padmanabhan, Sampath Kumar
Pou, Josep
Simanjorang, Rejeki
[J]. THIRTY-THIRD ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2018), 2018, : 2792 - 2797
[3] THERMAL FEEDBACK IN POWER SEMICONDUCTOR DEVICES
MULLER, O
PEST, J
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (09) : 770 - +
[4] Thermal modeling of semiconductor devices in power modules
Ammous, Kaicar
Abid, Slim
Ammous, Anis
[J]. MICROELECTRONICS INTERNATIONAL, 2007, 24 (03) : 46 - 54
[5] Measurements of thermal parameters of silicon carbide semiconductor devices
Zarebski, Janusz
Dabrowski, Jacek
Bisewski, Damian
[J]. PRZEGLAD ELEKTROTECHNICZNY, 2011, 87 (10): : 29 - 32
[6] Research on Package Thermal Resistance of Power Semiconductor Devices
Nishi, Koji
[J]. 2019 35TH SEMICONDUCTOR THERMAL MEASUREMENT, MODELING AND MANAGEMENT SYMPOSIUM (SEMI-THERM), 2019, : 61 - 65
[7] Nonlinear thermal reduced model for power semiconductor devices
Gatard, Emmanuel
Sommet, Raphael
Quere, Raymond
[J]. 2006 PROCEEDINGS 10TH INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONICS SYSTEMS, VOLS 1 AND 2, 2006, : 638 - +
[8] Nonlinear Compact Thermal Model of Power Semiconductor Devices
Gorecki, Krzysztof
Zarebski, Janusz
[J]. IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES, 2010, 33 (03): : 643 - 647
[9] MEASUREMENT OF THERMAL TRANSIENTS IN SEMICONDUCTOR POWER DEVICES AND CIRCUITS
WEBB, PW
[J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1983, 130 (04): : 153 - 159
[10] WAVEFORM MEASUREMENTS ON GIGAHERTZ SEMICONDUCTOR-DEVICES BY SCANNING ELECTRON-MICROSCOPE STROBOSCOPY
FUJIOKA, H
URA, K
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (01) : 81 - 82

← 1 2 3 4 5 →