Growth and structural characterization of strained epitaxial Hf0.5Zr0.5O2 thin films

被引：11
|
作者：
Torrejon, Luis [1 ]
Langenberg, Eric [2 ,3 ]
Magen, Cesar [2 ,3 ,4 ]
Larrea, Angel [2 ]
Blasco, Javier [2 ,3 ]
Santiso, Jose [5 ]
Algarabel, Pedro A. [2 ,3 ]
Pardo, Jose A. [1 ,4 ,6 ]
机构：
[1] Univ Zaragoza, Inst Nanociencia Aragon, Zaragoza 50018, Spain
[2] Univ Zaragoza, CSIC, Inst Ciencia Mat Aragon, E-50009 Zaragoza, Spain
[3] Univ Zaragoza, Dept Fis Mat Condensada, E-50009 Zaragoza, Spain
[4] Univ Zaragoza, Inst Nanociencia Aragon, Lab Microscopias Avanzadas, Zaragoza 50018, Spain
[5] Barcelona Inst Sci & Technol, CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona, Spain
[6] Univ Zaragoza, Dept Ciencia & Tecnol Mat & Fluidos, Zaragoza 50018, Spain
来源：
PHYSICAL REVIEW MATERIALS | 2018年 / 2卷 / 01期
关键词：
HFO2; FILMS; FERROELECTRICITY; ZIRCONIA; ZRO2;
D O I：
10.1103/PhysRevMaterials.2.013401
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ferroelectricity was recently reported in thin films with several compositions in the HfO2-ZrO2 system with orthorhombic crystal structure. In the present paper we study the growth by pulsed laser deposition and the structural characterization of strained epitaxial Hf0.5Zr0.5O2 films on (001)-oriented yttria-stabilized zirconia (YSZ) substrates. We have determined the conditions for the coherent growth and correlated the deposition parameters with the films structure andmicrostructure studied through a combination of x-ray diffraction, electron backscatter diffraction, and scanning transmission electron microscopy. In the range of experimental parameters explored, all the films show monoclinic structure with distorted lattice parameters relative to bulk.
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收藏
页数：7
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