EM and substrate coupling in silicon RFICs

被引：5
|
作者：
Amaya, R [1 ]
Popplewell, PHR
Cloutier, M
Plett, C
机构：
[1] Carleton Univ, Dept Elect, Ottawa, ON K1S 5B6, Canada
[2] Skyworks Solut Inc, Ottawa, ON K1V 1C1, Canada
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2005年 / 40卷 / 09期
关键词：
EM coupling; injection locking; RFIC; silicon; substrate coupling;
D O I：
10.1109/JSSC.2005.848178
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An investigation of coupling between inductors and resonators fabricated in silicon substrates is presented and the effects on RF systems and components are discussed. A novel experimental technique to measure inductor and resonator coupling is presented. The experiment is extremely sensitive, fast, accurate, and unique in that no matching, probe de-embedding, or calibration is necessary as the ratio of two on-chip signals is measured to yield the results.
引用
收藏
页码：1968 / 1971
页数：4
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