High-Fidelity Universal Gate Set for 9Be+ Ion Qubits

被引：389

作者：

Gaebler, J. P. ^{[1
]}

Tan, T. R. ^{[1
]}

Lin, Y. ^{[1
,2
,3
]}

Wan, Y. ^{[1
]}

Bowler, R. ^{[1
,4
]}

Keith, A. C. ^{[1
]}

Glancy, S. ^{[1
]}

Coakley, K. ^{[1
]}

Knill, E. ^{[1
]}

Leibfried, D. ^{[1
]}

Wineland, D. J. ^{[1
]}

机构：

[1] NIST, 325 Broadway, Boulder, CO 80305 USA

[2] Univ Colorado, Dept Phys, Boulder, CO 80309 USA

[3] Univ Colorado, JILA, Boulder, CO 80309 USA

[4] Univ Washington, Dept Phys, Seattle, WA 98195 USA

来源：

PHYSICAL REVIEW LETTERS | 2016年 / 117卷 / 06期

关键词：

TRAPPED IONS; QUANTUM COMPUTERS; STATE; PHYSICS;

D O I：

10.1103/PhysRevLett.117.060505

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report high-fidelity laser-beam-induced quantum logic gates on magnetic-field-insensitive qubits comprised of hyperfine states in Be-9(+) ions with a memory coherence time of more than 1 s. We demonstrate single-qubit gates with an error per gate of 3.8(1) x 10(-5). By creating a Bell state with a deterministic two-qubit gate, we deduce a gate error of 8(4) x 10(-4). We characterize the errors in our implementation and discuss methods to further reduce imperfections towards values that are compatible with fault-tolerant processing at realistic overhead.

引用

页数：5

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