Magnetic properties and imaging of Mn-implanted GaAs semiconductors

被引：44
|
作者：
Shi, J
Kikkawa, JM
Awschalom, DD
MedeirosRibeiro, G
Petroff, PM
Babcock, K
机构：
[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106
[2] DIGITAL INSTRUMENTS,SANTA BARBARA,CA 93111
来源：
JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 08期
关键词：
D O I：
10.1063/1.361356
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Submicron ferromagnets have been successfully incorporated into GaAs semiconductors by Mn+ ion implantation and subsequent heat treatment. Transmission electron microscopy, x-ray fluorescence spectrum analysis, and atomic force microscopy are used to structurally characterize the GaMn precipitates which form within the GaAs matrix. These crystallites are room-temperature ferromagnets with controllable magnetic properties. Magnetic force microscopy images reveal that unmagnetized samples contain both magnetic dipoles and quadrupoles, but that after magnetization the single-domain state predominates. (C) 1996 American Institute of Physics.
引用
收藏
页码：5296 / 5298
页数：3
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