Growth and doping characteristics of InGaN films grown by low pressure MOCVD

被引：0
|
作者：
Tong, YZ [1 ]
Li, F [1 ]
Zhang, GY [1 ]
Yang, ZJ [1 ]
Jin, SX [1 ]
Ding, XM [1 ]
Gan, ZZ [1 ]
机构：
[1] Beijing Univ, Dept Phys, Mesoscop Phys Lab, Beijing 100871, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 1999年 / 109卷 / 03期
关键词：
thin films; epitaxy; impurities in semiconductors; optical properties;
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
High quality In(x)Ga(1-x)N films with x values up to 0.3 were grown by low pressure MOCVD. It was found that x values in In(x)Ga(1-x)N films near exponentially decrease with growth temperature. The doping characteristics of InGaN films with Si and Zn were studied. At optimum growth conditions, the PL intensity of Zn doped InGaN film is about 30 times stronger than that of undoped InGaN film. The PL intensity of Si-doped InGaN film is strong as 13 times as that of undoped InGaN film. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：173 / 176
页数：4
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