Effects of substrate residue on the frequency response of high-tone bulk acoustic resonator

被引：0

作者：

Lin, Re-Ching ^{[1
]}

Chen, Ying-Chung ^{[1
]}

Hsieh, Po-Tsung ^{[1
]}

Kan, Kuo-Sheng ^{[2
]}

Wang, Chih-Ming ^{[3
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung, Taiwan

[2] SHU TE Univ, Dept Comp & Commun, Kaohsiung, Taiwan

[3] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung, Taiwan

来源：

PROCEEDINGS OF THE 2007 IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM-JOINTLY WITH THE 21ST EUROPEAN FREQUENCY AND TIME FORUM, VOLS 1-4 | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The high-tone bulk acoustic resonator (HBAR), consisted of a Mo/ZnO/Pt/Ti/Si structure, is fabricated. The thickness of Si substrate under HBAR is controlled by a two-step process of wet- and dry-etching. The resonance frequency spacing (Delta f) of BBAR is dependent on the etching duration. The frequency response of the HBAR is measured using an HP8720 network analyzer and a CASCADE probe station. The estimation of Si residue based on the high-tone resonant phenomenon coincides with practical measurements. A frequency response with no harmonic resonance, which is an extreme case of HBAR without Si residue, is revealed. Furthermore, a sensor of high-frequency bulk acoustic wave resonator is obtained.

引用

页码：695 / +

页数：2

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