Low-temperature thick-film dielectrics and resistors for metal substrates

被引:9
|
作者
Jacq, C [1 ]
Maeder, T [1 ]
Vionnet, S [1 ]
Ryser, P [1 ]
机构
[1] Ecole Polytech Fed Lausanne, Lab Prod Microtech, CH-1015 Lausanne, Switzerland
关键词
electrical properties; thermal expansion; glass; Al2O3; sensors;
D O I
10.1016/j.jeurceramsoc.2005.03.224
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this work, a set of low-temperature thick-film dielectrics consisting of two high-lead low-temperature glasses, stabilised by various amounts of alumina filler, is characterised on alumina and aluminium metal, as a function of firing temperature. Corresponding resistors based on the same glasses as the dielectrics, but with RuO2 as a conductive phase, were studied on the dielectrics. The purpose of these materials is to enable deposition of thick-film electronics onto substrates such as glass and metals (steel, aluminium, brass, titanium), which cannot be exposed to the standard high-temperature 850 degrees C thick-film firing cycle. Satisfactory insulating properties were obtained, and the properties of the resulting resistors are promising, but managing thermal mismatch was found to be a major issue regarding the mechanical integrity. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码:2121 / 2124
页数:4
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