Random telegraph signals caused by a single dopant in a metal-oxide-semiconductor field effect transistor at low temperature

被引：3

作者：

Ibukuro, Kouta ^{[1
]}

Hillier, Joseph William ^{[1
]}

Liu, Fayong ^{[1
]}

Husain, Muhammad Khaled ^{[1
]}

Li, Zuo ^{[1
]}

Tomita, Isao ^{[1
,2
]}

Tsuchiya, Yoshishige ^{[1
]}

Rutt, Harvey Nicholas ^{[1
]}

Saito, Shinichi ^{[1
,3
]}

机构：

[1] Univ Southampton, Sch Elect & Comp Sci, Univ Rd, Southampton SO17 1BJ, Hants, England

[2] Gifu Coll, Dept Elect & Comp Engn, Natl Inst Technol, 2236-2 Kamimakuwa, Gifu 5010495, Japan

[3] Hitachi Ltd, Ctr Exploratory Res Lab, Res & Dev Grp, Tokyo 1858601, Japan

来源：

AIP ADVANCES | 2020年 / 10卷 / 05期

基金：

英国工程与自然科学研究理事会; 欧盟地平线“2020”;

关键词：

THERMAL AGITATION; ELECTRON; MOBILITY; GATE; SPIN; BIAS; INVERSION; IMPACT; MODEL; RATES;

D O I：

10.1063/5.0009585

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

While the importance of atomic-scale features in silicon-based device for quantum application has been recognized and even the placement of a single atom is now feasible, the role of a dopant in the substrate has not attracted much attention in the context of quantum technology. In this paper, we report random telegraph signals (RTSs) originated from trapping and detrapping of an electron by a donor in the substrate of a p-type metal-oxide-semiconductor field-effect-transistor. RTSs, not seen when the substrate was grounded, were observed when a positive bias was applied to the substrate. The comprehensive study on the signals observed reveals that the nature of the RTSs is discrete threshold voltage variations due to the change in the depletion layer width depending on the charge state of a single dopant, neutral or positively charged.

引用

页数：13

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