LOW-TEMPERATURE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR OPERATION BY TEMPERATURE SCALING THEORY

We have demonstrated 77 K operation of deep-submicron metal-oxide-semiconductor field-effect transistors (MOSFET's) based on the temperature scaling concept. The measured subthreshold swing and the threshold voltage for the 77 K devices designed using the temperature scaling theory are both found to be scaled down to 1/4(congruent-to 77 K/300 K) as compared with those for 300 K devices. The threshold voltage shifts and the subthreshold swing shifts due to short-channel effects are also found to be scaled down by a factor of 1/4. Furthermore, it is demonstrated that a 0.18 mum 77 K MOSFET designed using the temperature-dimension combination scaling theory has the scaled characteristics of subthreshold swing and threshold voltage with no degradation due to short-channel effects. The temperature-dimension combination scaling theory provides a design guideline for 77 K deep-submicron MOSFET's.