Characterization of SnO2:F thin films deposited by an economic spray pyrolysis technique

被引：34

作者：

Memarian, Nafiseh ^{[1
]}

Rozati, Seyed Mohammad ^{[1
]}

Elamurugu, Elangovan ^{[2
,3
]}

Fortunato, Elvira ^{[2
,3
]}

机构：

[1] Univ Guilan, Dept Phys, Rasht 41335, Iran

[2] Univ Nova Lisboa, CENIMAT, FCT, I3N,Dept Ciencias Mat, P-2829516 Caparica, Portugal

[3] CEMOP UNINOVA, P-2829516 Caparica, Portugal

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 9 | 2010年 / 7卷 / 09期

关键词：

SnO2; doping; spray pyrolysis; structure; electrical properties; optical properties; OXIDE-FILMS; TRANSPARENT CONDUCTORS; ELECTRICAL-PROPERTIES; LOW-COST; FLUORINE; THICKNESS; PRECURSOR; GROWTH; SNCL2;

D O I：

10.1002/pssc.200983738

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Fluorine doped tin oxide (FTO) semiconductor thin films were deposited on glass substrates using spray pyrolysis technique and the effect of fluorine (F-) doping (varying 0-30 at %) is explored. X-ray diffraction studies confirmed the tetragonal structure with polycrystalline nature. The crystallinity of undoped films is enhanced with the increase in F-doping. The films doped with 25 at % F show a strong orientation along (101) plane. The grain size of the undoped films (214 nm) is increased with the increase in F-doping level to reach a maximum of 415 nm (25 at % F). A minimum sheet resistance of similar to 5.4 Omega/square obtained for the 30 at % F doped films is among the lowest reported values. The average visible transmittance (400-700 nm) of the undoped films (61.4 %) is increased with the increasing F-doping to reach a maximum of 74.5 % (25 at %. F). The films doped with 25 at. % F showed high value of figure of merit (4.55 x 10(-3) Omega(-1)). The obtained results authenticate the influence of F-doping on the properties of the deposited films. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：5

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