Characterization and optimization of the laser-produced plasma EUV source at 13.5 nm based on a double-stream Xe/He gas puff target

被引：55
|
作者：
Rakowski, R. [1 ]
Bartnik, A. [1 ]
Fiedorowicz, H. [1 ]
de Dortan, F. de Gaufridy [2 ]
Jarocki, R. [1 ]
Kostecki, J. [1 ]
Mikolajczyk, J. [1 ]
Ryc, L. [3 ]
Szczurek, M. [1 ]
Wachulak, P. [1 ,4 ]
机构：
[1] Mil Univ Technol, Inst Optoelect, PL-00908 Warsaw, Poland
[2] CEA Saclay, Serv Photons Atomes & Mol, F-91191 Gif Sur Yvette, France
[3] Inst Plasma Phys & Laser Microfus, PL-01497 Warsaw, Poland
[4] Colorado State Univ, Dept Elect & Comp Engn, Ft Collins, CO 80523 USA
来源：
APPLIED PHYSICS B-LASERS AND OPTICS | 2010年 / 101卷 / 04期
关键词：
EXTREME-ULTRAVIOLET EMISSION; HIGHLY-IONIZED XENON; X-RAY-EMISSION; MO/SI MULTILAYER MIRRORS; RADIATION SOURCE; SATELLITE LINES; LIGHT-SOURCES; LITHOGRAPHY; METROLOGY; SPECTRA;
D O I：
10.1007/s00340-010-4327-9
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The paper describes a debris-free, efficient laser-produced plasma source emitting EUV radiation. The source is based on a double-stream Xe/He gas-puff. Its properties and spectroscopic signatures are characterized and discussed. The spatio-spectral features of the EUV emission are investigated. We show a large body of results related to the intensity and brightness of the EUV emission, its spatial, temporal, and angular behavior and the effect of the repetition rate as well. A conversion efficiency of laser energy into EUV in-band energy at 13.5 nm of 0.42% has been gained. The electron temperature and electron density of the source were estimated by means of a novel method using the FLY code. The experimental data and the Hullac code calculations are compared and discussed. The source is well suited for EUV metrology purposes. The potential of the source for application in EUV lithography was earlier demonstrated in the optical characterization of Mo/Si multi-layer mirrors and photo-etching of polymers.
引用
收藏
页码：773 / 789
页数：17
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