Electric field-induced oxygen vacancies in YBa2Cu3O7

The microscopic doping mechanism behind the superconductor-to-insulator transition of a thin film of YBa2Cu3O7 was recently identified as due to the migration of O atoms from the CuO chains of the film. Here, we employ density-functional theory calculations to study the evolution of the electronic structure of a slab of YBa2Cu3O7 in the presence of oxygen vacancies under the influence of an external electric field. We find that, under massive electric fields, isolated O atoms are pulled out of the surface consisting of CuO chains. As vacancies accumulate at the surface, a configuration with vacancies located in the chains inside the slab becomes energetically preferred, thus providing a driving force for O migration toward the surface. Regardless of the defect configuration studied, the electric field is always fully screened near the surface, thus negligibly affecting diffusion barriers across the film. Published under an exclusive license by AIP Publishing.