Synthesis of silicon-based polymer films by UV laser ablation deposition of poly(methylphenylsilane)

被引:16
|
作者
Suzuki, M [1 ]
Nakata, Y [1 ]
Nagai, H [1 ]
Goto, K [1 ]
Nishimura, O [1 ]
Okutani, T [1 ]
机构
[1] Hokkaido Natl Ind Res Inst, Toyohira Ku, Sapporo, Hokkaido 062, Japan
关键词
laser ablation; polysilane; silicon-based polymer; film;
D O I
10.1016/S0921-5093(97)00730-2
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The deposition of silicon-based polymer film by UV laser ablation of poly(methylphenylsilane) (PMPS) was studied. Deposited films were formed by UV laser ablation deposition of PMPS. The molecular weights of the deposited films were smaller than that of the original polymer. The films exhibited a broad molecular weight distribution ranging from a few hundred to ca. 20000. The molecular weight distribution of the film depended on the laser fluence and the laser wavelength. The ablation process caused the Si-Si bonds in the PMPS to be converted into Si-C bonds, at the same time the deposited films contained the same side chain bonds as PMPS. In addition, the deposited films displayed a Si-H and an inorganic-like network Si-C bond, which was not contained in the original PMPS. The ablation at 351 nm suppressed the formation of both the Si-PI and the inorganic-like network SI-C bond. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:36 / 44
页数:9
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