Comparison of charge transport studies of chemical solution and pulsed laser deposited manganite-based thin film devices

The electrical transport properties of manganites play a significant role in the diverse applications of spintronics. In this communication, we report the variation in the electrical transport properties of Y0.95Ca0.05MnO3 (YCMO) films deposited on (100) single crystalline Si substrates by two different deposition techniques: chemical solution deposition (CSD) and pulsed laser deposition (PLD). The charge conduction mechanisms responsible for the electrical transport properties of these films have been studied across the YCMO/Si junctions using temperature-dependent current-voltage (I-V) and resistance-voltage characteristics and results have been compared for both the devices fabricated by CSD and PLD techniques. The role of structural strain and space charge limited conduction (SCLC) processes has been discussed to understand the results of I-V and electroresistance (ER) behavior across the junctions. The CSD grown films exhibits better electrical transport properties at the junction, i.e., high current across the junction, low junction resistance and large ER, and this has been discussed in detail on the basis of low structural strain present at the interface.