Energy exchange in field emission from semiconductors

被引：4

作者：

Chung, M. S. ^{[1
]}

Jang, Y. J. ^{[1
]}

Mayer, A. ^{[2
]}

Cutler, P. H. ^{[3
]}

Miskovsky, N. M. ^{[3
]}

Weis, B. L. ^{[3
]}

机构：

[1] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea

[2] Fac Univ Notre Dame Paix, Lab Phys Solide, B-5000 Namur, Belgium

[3] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2008年 / 26卷 / 02期

关键词：

D O I：

10.1116/1.2822944

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Field emission from semiconductors has been theoretically investigated by describing the energy transfer of electron. The authors developed a theory for the replacement process to calculate the energy exchange Delta epsilon between the electrons outgoing from and incoming to the semiconductor cathode. The obtained Delta epsilon is found to increase with increasing T and decreasing field F but to be almost independent of doping. It is also found that Delta epsilon is always positive, implying the cooling effect of field emission from the semiconductors for all temperatures. (c) 2008 American Vacuum Society.

引用

页码：800 / 805

页数：6

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