Energy exchange in field emission from semiconductors

被引:4
|
作者
Chung, M. S. [1 ]
Jang, Y. J. [1 ]
Mayer, A. [2 ]
Cutler, P. H. [3 ]
Miskovsky, N. M. [3 ]
Weis, B. L. [3 ]
机构
[1] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea
[2] Fac Univ Notre Dame Paix, Lab Phys Solide, B-5000 Namur, Belgium
[3] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
来源
关键词
D O I
10.1116/1.2822944
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Field emission from semiconductors has been theoretically investigated by describing the energy transfer of electron. The authors developed a theory for the replacement process to calculate the energy exchange Delta epsilon between the electrons outgoing from and incoming to the semiconductor cathode. The obtained Delta epsilon is found to increase with increasing T and decreasing field F but to be almost independent of doping. It is also found that Delta epsilon is always positive, implying the cooling effect of field emission from the semiconductors for all temperatures. (c) 2008 American Vacuum Society.
引用
收藏
页码:800 / 805
页数:6
相关论文
共 50 条
  • [1] Energy exchange in field emission from semiconductors
    Chung, Moon S.
    Jang, Yu. J.
    Mayer, A.
    Cutler, Paul H.
    Miskovsky, Nicholas M.
    2007 IEEE 20TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE, 2007, : 50 - +
  • [2] Multipeak characteristics of field emission energy distribution from semiconductors
    Wang, RZ
    Ding, XM
    Xue, K
    Zhao, BL
    Yan, H
    Hou, XY
    PHYSICAL REVIEW B, 2004, 70 (19) : 1 - 6
  • [3] FIELD EMISSION FROM SEMICONDUCTORS
    STRATTON, R
    PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (10): : 746 - 757
  • [4] Field emission from amorphous semiconductors
    Carey, JD
    Silva, SRP
    SOLID-STATE ELECTRONICS, 2001, 45 (06) : 1017 - 1024
  • [5] THEORY OF FIELD EMISSION FROM SEMICONDUCTORS
    STRATTON, R
    PHYSICAL REVIEW, 1962, 125 (01): : 67 - &
  • [6] GENERAL FEATURES OF FIELD EMISSION FROM SEMICONDUCTORS
    BASKIN, LM
    LVOV, OI
    FURSEY, GN
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 47 (01): : 49 - &
  • [7] FIELD EMISSION OF HOT ELECTRONS FROM SEMICONDUCTORS
    NEUMANN, H
    ANNALEN DER PHYSIK, 1969, 24 (1-2) : 72 - &
  • [8] FIELD EMISSION FROM SURFACE STATES IN SEMICONDUCTORS
    MODINOS, A
    SURFACE SCIENCE, 1974, 42 (01) : 205 - 227
  • [9] ORIGIN OF EMISSION CURRENT SATURATION IN FIELD EMISSION FROM SEMICONDUCTORS
    EGOROV, NV
    FURSEI, GN
    MANOKHIN, SP
    SOVIET PHYSICS SOLID STATE,USSR, 1971, 13 (06): : 1525 - +
  • [10] UNIFIED THEORY OF THERMIONIC AND FIELD EMISSION FROM SEMICONDUCTORS
    CHRISTOV, SG
    PHYSICA STATUS SOLIDI, 1967, 21 (01): : 159 - &