Electronic properties of graphene-based heterostructures

被引：2
|
作者：
Skachkova, V. A. [1 ]
Baranava, M. S. [1 ]
Hvazdouski, D. C. [1 ]
Stempitsky, V. R. [1 ]
机构：
[1] Belarusian State Univ Informat & Nanoelect, Micro & Nanoelect Dept, Lab CAD Micro & Nanoelect, Minsk 220015, BELARUS
来源：
4TH INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2017) | 2017年 / 917卷
关键词：
SEMICONDUCTOR;
D O I：
10.1088/1742-6596/917/9/092012
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Heterostructures based on graphene were investigated by using density function theory (DFT). It is found that energy gap appear in ZnS-graphene heterostructure. Heterostructures graphene-ZnO and graphene-phosphorene have almost zero-band gap. Binding energy between heterostructure layers was determined.
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页数：4
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