Optically determined carrier transport in quantum wires of InGaAs embedded in an InP matrix

被引：0
|
作者：
Monte, AFG [1 ]
da Silva, SW [1 ]
Morais, PC [1 ]
Cruz, JMR [1 ]
Chaves, AS [1 ]
机构：
[1] Univ Brasilia, Inst Fis, Nucl Fis Aplicada, BR-70919 Brasilia, DF, Brazil
来源：
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The diffusion of electron-hole plasma in intrinsic In0.53Ga0.47As quantum wires embedded in an InP matrix was investigated by measuring the photoluminescence (PL) intensity profile around the laser spot area. We found that the PL image shows an anisotropic carrier diffusion on the plane of the wires at low temperature.
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页码：1081 / 1082
页数：2
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