Terahertz emission from InAs/GaAs quantum dot based photoconductive devices

被引：12

作者：

Daghestani, N. S. ^{[1
]}

Cataluna, M. A. ^{[1
]}

Berry, G. ^{[1
]}

Ross, G. ^{[2
]}

Rose, M. J. ^{[1
]}

机构：

[1] Univ Dundee, Sch Engn Phys & Math, Carnegie Lab Phys, Dundee DD1 4HN, Scotland

[2] NCR FSG Ltd, Discovery Ctr, Dundee DD2 4SW, Scotland

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 18期

关键词：

SPECTROSCOPY; RADIATION;

D O I：

10.1063/1.3586774

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report terahertz (THz) generation from InAs/GaAs quantum-dot based photoconductive antennae with femtosecond optical excitation at 800 nm, with an estimated infrared-to-THz conversion efficiency of similar to 0.9 x 10(-5). The quantum dots act as recombination centers for carriers generated in the GaAs layers within the structure. Photoreflective pump-probe measurements reveal a decrease in the carrier lifetime when a lateral voltage is applied. These antennae displayed resilience to Joule heating when operated at a field strength of 46 MV/m. The breakdown field of the devices was 48 MV/m, which is comparable to the breakdown field of bulk GaAs. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3586774]

引用

页数：3

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