New CMOS fully differential difference transconductors and application to fully differential filters suitable for VLSI

被引：31
|
作者：
Mahmoud, SA [1 ]
Soliman, AM [1 ]
机构：
[1] Cairo Univ, Elect & Commun Engn Dept, Giza, Egypt
来源：
MICROELECTRONICS JOURNAL | 1999年 / 30卷 / 02期
关键词：
CMOS transconductors; filters;
D O I：
10.1016/S0026-2692(98)00105-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
New CMOS voltage controlled fully differential difference transconductors (FDDT) are presented. The basic structure of the proposed transconductors is based on the current Linearization of basic MOS cells in different configurations consisting from two or four NMOS matched transistors operating in the saturation region. The proposed transconductors are used to design fully differential second order lowpass, bandpass and highpass filters suitable for VLSI. PSpice simulation results for the proposed fully differential difference transconductors and their filter applications indicating the linearity range and verifying the analytical results are also given. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：169 / 192
页数：24
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