Immobilization of dislocations by oxygen precipitates in Czochralski silicon: Feasibility of precipitation strengthening mechanism

被引：14
|
作者：
Zeng, Zhidan [1 ,2 ]
Chen, Jiahe [1 ,2 ]
Zeng, Yuheng [1 ,2 ,3 ]
Ma, Xiangyang [1 ,2 ]
Yang, Deren [1 ,2 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
[2] Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China
[3] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2011年 / 324卷 / 01期
关键词：
Dislocation; Dispersion strengthening; Oxygen precipitates; Precipitation strengthening; Stress; Czochralski silicon; CZ-SILICON; GENERATION; SLIP; MICRODEFECTS; MORPHOLOGY; DIFFUSION; STRESS;
D O I：
10.1016/j.jcrysgro.2011.04.023
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The dislocation motion in Czochralski (Cz) silicon containing oxygen precipitates of different densities and sizes has been experimentally investigated in order to identify the strengthening mechanism of oxygen precipitates. The correlation of rosette sizes and oxygen precipitate densities and sizes was investigated quantitatively in terms of dispersion and precipitation strengthening mechanism. It is found that the precipitation strengthening mechanism is much more appropriate to account for the immobilization effect of oxygen precipitates on dislocations as compared to the dispersion strengthening mechanism. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：93 / 97
页数：5
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