Magneto-optic effects of n-type modulation-doped GaAs/(Al,Ga)As coupled double quantum wells

被引:0
|
作者
Kim, YM [1 ]
机构
[1] Dankook Univ, Dept Appl Phys, Seoul 140714, South Korea
关键词
semiconductor; mangetic field; photolummescence; quantum well;
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
yPhotoluminescence measurements of strongly coupled GaAs/AlGaAs double quantum well systems were made in magnetic fields to 18 T. At low fields (below 5 T), the optical transition Landau level selection rule (Deltan = 0) was broken and forbidden transitions (Deltan not equal 0) emerged. Moreover, the lowest Landau level transition (0-0) was missing. With increasing magnetic fields, the (1-0) Landau level transition smoothly approached the (0-0) transition. Such a non-linear optical process is due to the combined effect of formation of a magnetically induced excitonic state and a scattering process induced by interface roughness.
引用
收藏
页码:475 / 478
页数:4
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