Characterization of AIIIBV epitaxial layers by scanning spreading resistance microscopy

被引：0
|
作者：
Szyszka, Adam [1 ]
Sciana, Beata [1 ]
Radziewicz, Damian [1 ]
Macherzynski, Wojciech [1 ]
Paszkiewicz, Bogdan [1 ]
Tlaczala, Marek [1 ]
机构：
[1] Wroclaw Univ Technol, Fac Microsyst Elect & Photon, PL-50372 Wroclaw, Poland
来源：
OPTICA APPLICATA | 2011年 / 41卷 / 02期
关键词：
scanning spreading resistance microscopy (SSRM); spreading resistance; GaAs; atomic force microscopy (AFM);
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
One of the electrical characterization techniques of semiconductor structures with nanometer spatial resolution is scanning spreading resistance microscopy (SSRM). The applicability of SSRM technique for characterization of GaAs structures with n-type doping fabricated by metalorganic vapour phase epitaxy (MOVPE) was examined. The influence of scaling effect on the nanometer size AFM tip-semiconductor electrical characteristics was described. The results of characterization of device structure of magnetic field sensitive field effect transistor were presented.
引用
收藏
页码：281 / 288
页数：8
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