Temperature dependent photoluminescence in self assembled InAs quantum dot arrays

被引：1

作者：

Lamba, S ^{[1
]}

Joshi, SK

机构：

[1] Univ Delhi, Dept Phys & Astrophys, Delhi 110007, India

[2] Natl Phys Lab, New Delhi 110012, India

[3] Indian Inst Sci, Jawaharlal Nehru Ctr Adv Sci Res, Bangalore 560065, Karnataka, India

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2003年 / 239卷 / 02期

关键词：

D O I：

10.1002/pssb.200301807

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this paper we investigate the competing effects of thermally assisted hopping and radiative recombination of disorder induced spatially localized excitons on the temperature dependent PL spectrum of a self assembled InAs quantum dot array on GaAs. The stationary photoluminescence spectrum due to the lowest exciton state is calculated from a Monte Carlo simulation. We have also included the effect of the narrowing of the band gap with the increase of temperature. Our results on variation of the peak position and linewidth of the PL spectrum with temperature are in agreement with existing experimental results on InAs/GaAs dot arrays. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：353 / 360

页数：8

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