Liquid Phase Exfoliation of MoS2 Nano-sheets and Observation of Resistive Switching Memory in MoS2 Nano-sheets-PVDF-HFP Composite Films

被引:12
|
作者
Deepak [1 ]
Deb, Rajesh [1 ]
Nair, Manjula G. [1 ]
Halder, Sudipta [2 ]
Sharma, A. L. [3 ]
Mohapatra, Saumya R. [1 ]
机构
[1] Natl Inst Technol Silchar, Dept Phys, Silchar 788010, Assam, India
[2] Natl Inst Technol Silchar, Dept Mech Engn, Silchar 788010, Assam, India
[3] Cent Univ Punjab, Ctr Phys Sci, Bhatinda 151001, India
关键词
MoS2; nano-sheets; Liquid-phase method; polymer composite; resistance switching memory;
D O I
10.1016/j.matpr.2019.07.574
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
To realise the true and versatile application potentials of 2-D materials like MoS2, the preparation of mono-layer or few layer nano-sheets holds the key. In the present study, we report the successful exfoliation of bulk MoS2 into few layer nano-sheets by adopting a two-step process of grinding and then two hours of ultrasonication by using a probe sonicator. The yield of exfoliation was 32 mg/10 ml and the exfoliated MoS2 was very stable without any re-stacking for more than one month. Further, the exfoliated MoS2 nano-sheets are added to Poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) to prepare the nanocomposite thin films. Two-terminal devices are prepared with ITO and aluminium as bottom and top electrodes, respectively on a plastic substrate. Its electrical properties are investigated to observe the electrical bistability. Nanocomposite based devices showed bipolar resistive switching memory. For composite film with 1 wt.% of MoS2, resistance switching is observed with SET and RESET voltages at 2.74 V and -0.9 V respectively. Resistance ratio of the order of 10(4) is achieved between the ON and OFF states. (C) 2019 Elsevier Ltd. All rights reserved.
引用
收藏
页码:5447 / 5453
页数:7
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