Phase formation and stability of polycrystalline NaxGa4+xTi1-xO8, (x∼0.7)

The formation and stability of polycrystalline NaxGa4+xTi1-xO8, (x similar to 0.7) was examined. High temperature x-ray diffraction (HTXRD) showed that NaxGa4+xTi1-xO8, (x similar to 0.7), begins to form from component oxides and carbonates at similar to 950 degrees C and shows complete reaction within 24 h while being held at 1050 degrees C. The desired Na0.7Ga4.7Ti0.3O8 phase remains only nominally phase pure with residual gallium oxide identifiable. Further heating of the reacted material results in the decomposition of the material beginning at similar to 1200 degrees C in which Ga2O3 and other intermediate phases are seen in the diffraction pattern. (C) 2008 Elsevier B.V. All rights reserved.