Growth characterization of vertically aligned carbon nanofibers on top of TiN buffer layer for nanoelectromechanical devices

被引：3
|
作者：
Ghavanini, Farzan A. [1 ]
Damian, Maria E. L. [1 ]
Rafieian, Damon [1 ]
Lundgren, Per [1 ]
机构：
[1] Chalmers Univ Technol, Microtechnol & Nanosci Dept, S-41296 Gothenburg, Sweden
来源：
EUROSENSORS XXIV CONFERENCE | 2010年 / 5卷
关键词：
Vertucally aligned carbon nanofiber; VACNF; Titanium Nitride; Plasma enhanced CVD; Growth; NICKEL;
D O I：
10.1016/j.proeng.2010.09.306
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
Initial growth of vertically aligned carbon nanofibers (VACNFs) from Ni catalyst seed in the range of 40 to 100 nm as fabricated using hole-mask colloidal lithography on to p of reacatively sputtered TiN is studied. We observe that the initial growth conditions could cause a growth mode transition from base-type to tip-type. We attribute this transition to a change in the crystallographic orientation of the Ni catalyst seeds induced by initial growth conditions. A convenient method to deposit stoichiometeric TiN films is also presented. (C) 2010 Published by Elsevier Ltd.
引用
收藏
页码：1115 / 1118
页数：4
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