Electrical Resistivity in Non-stoichiometric MoO2

被引:10
|
作者
Alves, L. M. S. [1 ]
Benaion, S. S. [1 ]
Romanelli, C. M. [1 ]
dos Santos, C. A. M. [1 ]
da Luz, M. S. [1 ,2 ]
de Lima, B. S. [1 ]
Oliveira, F. S. [1 ]
Machado, A. J. S. [1 ]
Guedes, E. B. [3 ]
Abbate, M. [3 ]
Mossanek, R. J. O. [3 ]
机构
[1] Univ Sao Paulo, Escola Engn Lorena, BR-12600970 Lorena, SP, Brazil
[2] Univ Fed Triangulo Mineiro, Inst Ciencias Tecnol & Exatas, BR-38064200 Uberaba, MG, Brazil
[3] Univ Fed Parana, Dept Fis, BR-81531990 Curitiba, PR, Brazil
基金
巴西圣保罗研究基金会;
关键词
Oxides; Photoelectron spectroscopy; Electrical properties; CRYSTAL-STRUCTURE; STRUCTURAL TRANSITIONS; MOLYBDENUM OXIDES;
D O I
10.1007/s13538-015-0307-1
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
MoO (y) with 1.85 a parts per thousand currency signaEuro parts per thousand y a parts per thousand currency signaEuro parts per thousand 2.20 has been studied by X-ray diffractometry and photoemission spectroscopy at room temperature and by electrical resistance as a function of temperature from 2 to 300 K. Although X-ray diffractograms are very similar to the stoichiometric MoO2 with monoclinic structure of the space group P2(1)/c (14), the electrical properties are strongly dependent on the oxygen composition. Samples with y = 1.85 and 1.90 show anomalous behavior in electrical conductivity. Photoemission and X-ray absorption spectroscopy measurements suggest that this anomalous behavior is related to the presence of Mo3+ ions such as in KxMoO2 compound.
引用
收藏
页码:234 / 237
页数:4
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