Electrical Resistivity in Non-stoichiometric MoO2

被引：10

作者：

Alves, L. M. S. ^{[1
]}

Benaion, S. S. ^{[1
]}

Romanelli, C. M. ^{[1
]}

dos Santos, C. A. M. ^{[1
]}

da Luz, M. S. ^{[1
,2
]}

de Lima, B. S. ^{[1
]}

Oliveira, F. S. ^{[1
]}

Machado, A. J. S. ^{[1
]}

Guedes, E. B. ^{[3
]}

Abbate, M. ^{[3
]}

Mossanek, R. J. O. ^{[3
]}

机构：

[1] Univ Sao Paulo, Escola Engn Lorena, BR-12600970 Lorena, SP, Brazil

[2] Univ Fed Triangulo Mineiro, Inst Ciencias Tecnol & Exatas, BR-38064200 Uberaba, MG, Brazil

[3] Univ Fed Parana, Dept Fis, BR-81531990 Curitiba, PR, Brazil

来源：

BRAZILIAN JOURNAL OF PHYSICS | 2015年 / 45卷 / 02期

基金：

巴西圣保罗研究基金会;

关键词：

Oxides; Photoelectron spectroscopy; Electrical properties; CRYSTAL-STRUCTURE; STRUCTURAL TRANSITIONS; MOLYBDENUM OXIDES;

D O I：

10.1007/s13538-015-0307-1

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

MoO (y) with 1.85 a parts per thousand currency signaEuro parts per thousand y a parts per thousand currency signaEuro parts per thousand 2.20 has been studied by X-ray diffractometry and photoemission spectroscopy at room temperature and by electrical resistance as a function of temperature from 2 to 300 K. Although X-ray diffractograms are very similar to the stoichiometric MoO2 with monoclinic structure of the space group P2(1)/c (14), the electrical properties are strongly dependent on the oxygen composition. Samples with y = 1.85 and 1.90 show anomalous behavior in electrical conductivity. Photoemission and X-ray absorption spectroscopy measurements suggest that this anomalous behavior is related to the presence of Mo3+ ions such as in KxMoO2 compound.

引用

页码：234 / 237

页数：4

共 50 条

[1] Electrical Resistivity in Non-stoichiometric MoO2
L. M. S. Alves
S. S. Benaion
C. M. Romanelli
C. A. M. dos Santos
M. S. da Luz
B. S. de Lima
F. S. Oliveira
A. J. S. Machado
E. B. Guedes
M. Abbate
R. J. O. Mossanek
Brazilian Journal of Physics, 2015, 45 : 234 - 237
[2] EQUILIBRIUM BETWEEN NON-STOICHIOMETRIC Mo AND MoO2 - WITH APPLICATION OF SIEVERTS` LAW CONSTANT TO SMILTENS` INTEGRATION.
Fang, Zheng
Chen, Xinmin
Jinshu Xuebao/Acta Metallurgica Sinica, 1988, 24 (01):
[3] Electrical properties of stoichiometric and non-stoichiometric calcium zirconate
Dudek, M
Bucko, MM
SOLID STATE IONICS, 2003, 157 (1-4) : 183 - 187
[4] ELECTRICAL PROPERTIES OF NON-STOICHIOMETRIC URANIUM DIOXIDE
IIDA, S
JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (11) : 833 - &
[5] ELECTRICAL PROPERTIES OF NON-STOICHIOMETRIC NICKEL OXIDE
NACHMAN, M
COJOCARU, LN
RIBCO, LV
PHYSICA STATUS SOLIDI, 1965, 8 (03): : 773 - &
[6] ELECTRICAL PROPERTIES OF NON-STOICHIOMETRIC CR2O3
COJOCARU, LN
ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-FRANKFURT, 1969, 64 (5-6): : 255 - &
[7] ELECTRICAL CONDUCTIVITY AND DEFECT STRUCTURES IN NON-STOICHIOMETRIC UO2+X
ISHII, T
NAITO, K
OSHIMA, K
JOURNAL OF NUCLEAR MATERIALS, 1970, 36 (03) : 288 - &
[8] Effects of substrate temperature on the resistivity of non-stoichiometric sputtered NiOx films
Lu, YM
Hwang, WS
Yang, JS
SURFACE & COATINGS TECHNOLOGY, 2002, 155 (2-3): : 231 - 235
[9] SINTERING MECHANISM IN STOICHIOMETRIC AND NON-STOICHIOMETRIC UO2
ARAOZ, C
AMERICAN CERAMIC SOCIETY BULLETIN, 1965, 44 (04): : 391 - &
[10] NON-STOICHIOMETRIC COMPOUNDS
VLCEK, AA
CHEMICKE LISTY, 1965, 59 (06): : 749 - &

← 1 2 3 4 5 →