Resistance switching of heteroepitaxial Cr-doped SrZrO3 thin films

被引：1
|
作者：
Yang, Min Kyu [1 ]
Park, Jae-Wan [1 ]
Lee, Jeon-Kook [1 ]
机构：
[1] Korea Inst Sci & Technol, Optoelect Mat Ctr, Seoul 136791, South Korea
来源：
METALS AND MATERIALS INTERNATIONAL | 2011年 / 17卷 / 04期
关键词：
electrical/electronic materials; deposition; defects; epitaxy; atomic force microscopy (AFM); SrZrO3; NONVOLATILE MEMORY;
D O I：
10.1007/s12540-011-0818-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Heteroepitaxial Cr-doped SrZrO3 thin films were grown on 200 nm-thick SrRuO3 films deposited on SrTiO3 (100) substrates by pulsed laser deposition. The Cr-doped SrZrO3 films on the SrRuO3 bottom electrode exhibited an XRD peak for the (hh0/00l) planes of SrZrO3 and SrRuO3 thin films, showing a good epitaxial relationship. The I-V characteristics of the Au/Cr-doped SrZrO3/SrRuO3 MIM structures revealed resistance switching behavior with an ON/OFF resistance ratio of 20.
引用
收藏
页码：637 / 640
页数：4
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