Modification of electrical properties of CdSxSe1-x films by hard irradiation and nanostructuring

被引：8
|
作者：
Saad, AM
Fedotov, AK
Mazanik, AV
Tarasik, MI
Yanchenko, AM
Posedko, AS
Survilo, LY
Trofimov, YV
Kurilovich, NF
机构：
[1] Belarusian State Univ, Minsk 220050, BELARUS
[2] Al Balqa Appl Univ, Amman 11953, Jordan
[3] NAS Belarus, Inst Elect, Minsk 220050, BELARUS
来源：
THIN SOLID FILMS | 2005年 / 487卷 / 1-2期
关键词：
CdSxSe1-x films; radiation doping; grain boundaries;
D O I：
10.1016/j.tsf.2005.01.065
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Effects of irradiation of 1 MeV electrons or Co-60 gamma-quantum and nanostructuring on CdSxSe1-x solid solution layers, affecting their influence on the fluctuations of the potential relief, were studied in this paper. The films were deposited onto textured (by thin silver sublayer) and untextured substrates and characterized by light conductance using the photosensitivity technique with light-emitting diodes for the excitation of the films conductance. The structure properties of the manufactured films were analyzed using SEM. (C) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：202 / 204
页数：3
相关论文
共 50 条
  • [21] NONLINEAR TRANSMISSION OF CDSXSE1-X CRYSTALS
    DNEPROVSKII, VS
    KLIMOV, VI
    NAZVANOVA, EV
    FIZIKA TVERDOGO TELA, 1990, 32 (07): : 1941 - 1946
  • [22] Solvothermal synthesis of CdSxSe1-x nanorods
    Liu Yong
    Qiu Hua-Yu
    Wu Dong
    Sun Yu-Han
    Jiang Jian-Xiong
    Lai Guo-Qiao
    CHINESE JOURNAL OF INORGANIC CHEMISTRY, 2006, 22 (07) : 1239 - 1245
  • [23] FLUORESCENCE PROPERTIES OF MIXED CDSXSE1-X CRYSTALS PREPARED BY DIFFUSION
    TAYLOR, HF
    SMILEY, VN
    LEWIS, AL
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1971, 61 (05) : 678 - &
  • [24] Investigation on spectroscopic and electrical properties of p-Si/CdSxSe1-x (0≤ x ≤1) heterostructures for photodetector applications
    Moger, Sahana Nagappa
    Mahesha, M. G.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 870
  • [25] STOICHIOMETRY CONTROL OF CDSXSE1-X AND ITS EFFECTS ON PHOTOELECTRICAL PROPERTIES
    MOCHIZUKI, K
    SHIBAZAKI, O
    JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (03) : 269 - 282
  • [26] CDSXSE1-X NANOCRYSTALS IN A SILICATE GLASS
    RAMOS, A
    TCHOUBAR, D
    PONS, CH
    JOURNAL DE PHYSIQUE IV, 1993, 3 (C8): : 377 - 380
  • [27] Local organization in CdSxSe1-x crystallites
    Ramos, A.
    Levelut, C.
    Petiau, J.
    Materials science & engineering. B, Solid-state materials for advanced technology, 1991, B9 (04): : 425 - 428
  • [28] GROWTH OF CDSXSE1-X THIN-FILMS BY LASER EVAPORATION DEPOSITION
    KWOK, HS
    ZHENG, JP
    WITANACHCHI, S
    SHI, L
    SHAW, DT
    APPLIED PHYSICS LETTERS, 1988, 52 (21) : 1815 - 1818
  • [29] CHARACTERISTICS OF INDIUM-DOPED CDSXSE1-X THIN-FILMS
    WENG, TH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (08) : C359 - C359
  • [30] Creating Micron Regions with Modified Luminescent Properties and Topology on CdSxSe1-x Films by Laser Annealing
    Bratashov, D. N.
    Klimova, S. A.
    Serdobintsev, A. A.
    Malyar, I. V.
    Stetsyura, S. V.
    TECHNICAL PHYSICS LETTERS, 2012, 38 (06) : 572 - 575
12345