Effect of high-frequency electromagnetic radiation on the plasmon dispersion in biased graphene bilayer

被引：2
|
作者：
Kukhar, E. I. [1 ,2 ]
机构：
[1] Volgograd State Sociopedag Univ, VI Lenin Ave 27, Volgograd 400066, Russia
[2] Volgograd State Tech Univ, VI Lenin Ave 28, Volgograd 400005, Russia
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2019年 / 105卷
关键词：
Graphene bilayer; Floquet spectrum; Plasma oscillations; Plasmon; TRANSPORT;
D O I：
10.1016/j.physe.2018.08.016
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The Floquet spectrum of electron in biased graphene bilayer subjected to the high-frequency electromagnetic radiation has been derived. The magnitude of gap in electron spectrum renormalized by radiation has been calculated. The quasienergy gap has been shown to increase with electromagnetic wave intensity. The possibility of controlling of curvature of dispersion curve for plasmon by changing of both bias voltage and high-frequency field intensity has been shown. The dependence of this curvature on both bias voltage and electromagnetic field amplitude has been predicted to have the nonmonotonous character. Intensity of electromagnetic radiation causing the suppression of the plasma oscillations has been found.
引用
收藏
页码：1 / 6
页数：6
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